UPA800T NPN Transistor

NEC

Description

PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA800T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MI.

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Datasheet Specifications

Part number: UPA800T
Manufacturer: NEC
File Size: 51.21 KB
Datasheet: UPA800T_NEC.pdf
Description: NPN Transistor

Features

* Low Noise 0.65 0.65 1.3
* High Gain |S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA
* A Mini Mold Package Adopted
* Built-in 2 Transistors (2 × 2SC4228) 2.0±0.2 2 3 0.7 PART NUMBER QUANTITY Loose products (50 PCS) PACKING STYLE Embossed tape 8 mm wi

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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UPA800T NPN Transistor NEC

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