* Low noise o Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP. r @f = 1 GHz, VCE = 3 V, IC = 7 mA
* High gain P Q1 : |S21e|2 = 9.0 dB TYP. Q2 : |S21e|2 = 12.0 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA
* 6-pin thin-type small mini mold package d
* 2 different transistors on
uPA831TF Datasheet (127.25 KB)
uPA831TF
127.25 KB
Npn silicon epitaxial transistor.
PRELIMINARY DATA SHEET
Silicon Transistor
µPA831TF
0.22
*+00..015
0 to 0.1 0.13±0.05
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEM.
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