uPA831TF NPN SILICON EPITAXIAL TRANSISTOR

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Description

PRELIMINARY DATA SHEET Silicon Transistor µPA831TF 0.22 *+00..015 0 to 0.1 0.13±0.05 NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEM.
The µPA831TF has two different built-in transistors (Q1 c and Q2) for low noise amplification in the VHF band to UHF u band. Low.

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Datasheet Specifications

Part number: uPA831TF
Manufacturer: Renesas ↗
File Size: 127.25 KB
Datasheet: uPA831TF-Renesas.pdf
Description: NPN SILICON EPITAXIAL TRANSISTOR

Features

* Low noise o Q1 : NF = 1.2 dB TYP. , Q2 : NF = 1.4 dB TYP. r @f = 1 GHz, VCE = 3 V, IC = 7 mA
* High gain P Q1 : |S21e|2 = 9.0 dB TYP. Q2 : |S21e|2 = 12.0 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA
* 6-pin thin-type small mini mold package d
* 2 different transistors on

uPA831TF Distributors

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uPA831TF NPN SILICON EPITAXIAL TRANSISTOR Renesas

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