UPA2201T1M N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Renesas

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2201T1M N-CHANNEL MOS FET FOR SWITCHING .
The μ PA2201T1M is N-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch.

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Datasheet Specifications

Part number: UPA2201T1M
Manufacturer: Renesas ↗
File Size: 204.42 KB
Datasheet: UPA2201T1M-Renesas.pdf
Description: N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Features

* Low on-state resistance RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 V, ID = 9 A) RDS(on)2 = 27 mΩ MAX. (VGS = 2.5 V, ID = 4.5 A)
* Built-in gate protection diode
* 2.5 V Gate drive available ORDERING INFORMATION PART NUMBER PACKING PACKAGE μ PA2201T1M-T1-AT Note μ PA2201T1M-T2-

UPA2201T1M Distributors

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UPA2201T1M N-CHANNEL MOS FIELD EFFECT TRANSISTOR Renesas

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