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UPA2201T1M - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

UPA2201T1M Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2201T1M N-CHANNEL MOS FET FOR SWITCHING .
The μ PA2201T1M is N-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch.

UPA2201T1M Features

* Low on-state resistance RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 V, ID = 9 A) RDS(on)2 = 27 mΩ MAX. (VGS = 2.5 V, ID = 4.5 A)
* Built-in gate protection diode
* 2.5 V Gate drive available ORDERING INFORMATION PART NUMBER PACKING PACKAGE μ PA2201T1M-T1-AT Note μ PA2201T1M-T2-

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Datasheet Details

Part number
UPA2201T1M
Manufacturer
Renesas ↗
File Size
204.42 KB
Datasheet
UPA2201T1M-Renesas.pdf
Description
N-CHANNEL MOS FIELD EFFECT TRANSISTOR

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N-CHANNEL MOS FIELD EFFECT TRANSISTOR Renesas
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