UPA2201T1M Datasheet, Transistor, Renesas

UPA2201T1M Features

• Transistor
• Low on-state resistance RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 V, ID = 9 A) RDS(on)2 = 27 mΩ MAX. (VGS = 2.5 V, ID = 4.5 A)
• Built-in gate protection diode
• 2.5

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Part number:

UPA2201T1M

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Renesas ↗

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📄 Datasheet

Description:

N-channel mos field effect transistor. The μ PA2201T1M is N-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as l

UPA2201T1M Application

• Applications of portable equipments, such as load switch. FEATURES
• Low on-state resistance RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 V, ID = 9 A

TAGS

UPA2201T1M

Renesas

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