Part number:
UPA2201T1M
Manufacturer:
File Size:
204.42 KB
Description:
N-channel mos field effect transistor.
UPA2201T1M Datasheet (204.42 KB)
* Low on-state resistance RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 V, ID = 9 A) RDS(on)2 = 27 mΩ MAX. (VGS = 2.5 V, ID = 4.5 A)
* Built-in gate protection diode
* 2.5 V Gate drive available ORDERING INFORMATION PART NUMBER PACKING PACKAGE μ PA2201T1M-T1-AT Note μ PA2201T1M-T2-
UPA2201T1M Datasheet (204.42 KB)
UPA2201T1M
204.42 KB
N-channel mos field effect transistor.
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