UPA2210T1M P-CHANNEL MOS FET

Renesas

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2210T1M P-CHANNEL MOS FET FOR SWITCHING .
The μ PA2210T1M is P-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch.

📥 Download Datasheet

UPA2210T1M Datasheet Preview — Preview of UPA2210T1M PDF

Datasheet Specifications

Part number: UPA2210T1M
Manufacturer: Renesas ↗
File Size: 294.92 KB
Datasheet: UPA2210T1M-Renesas.pdf
Description: P-CHANNEL MOS FET

Features

* Low on-state resistance RDS(on)1 = 29 mΩ MAX. (VGS =
* 4.5 V, ID =
* 7.2 A) RDS(on)2 = 41 mΩ MAX. (VGS =
* 2.5 V, ID =
* 3.6 A) RDS(on)3 = 81 mΩ MAX. (VGS =
* 1.8 V, ID =
* 3.6 A)
* Built-in gate protection diode
* 1.8 V Ga

UPA2210T1M Distributors

📁 Related Datasheet

UPA2001C UPA2002C UPA2003C UPA2004C UPA2008 UPA2450

📌 All Tags

UPA2210T1M P-CHANNEL MOS FET Renesas

Renesas UPA2210T1M-like datasheet