Part number:
UPA2460T1Q
Manufacturer:
File Size:
223.10 KB
Description:
Mos field effect transistor.
* a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features
* 2.5 V drive available
* Low on-state resistance ⎯ RDS(on)1 = 17.5 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) ⎯ RDS(on)2 = 18.5 mΩ
UPA2460T1Q Datasheet (223.10 KB)
UPA2460T1Q
223.10 KB
Mos field effect transistor.
📁 Related Datasheet
UPA2461T1Q MOS FIELD EFFECT TRANSISTOR (Renesas)
UPA2462T1Q MOSFET (Renesas)
UPA2463T1Q MOSFET (Renesas)
UPA2464T1Q MOSFET (Renesas)
UPA2465T1Q MOS FIELD EFFECT TRANSISTOR (Renesas)
UPA2450 N-Channel MOSFET (NEC)
UPA2450B N-Channel MOSFET (NEC)
UPA2450C N-Channel MOSFET (NEC)
UPA2451 N-Channel MOSFET (NEC)
UPA2451B N-Channel MOSFET (NEC)