UPA2465T1Q - MOS FIELD EFFECT TRANSISTOR
UPA2465T1Q Features
* a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features
* 2.5 V drive available
* Low on-state resistance ⎯ RDS(on)1 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) ⎯ RDS(on)2 = 17.0 mΩ
