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UPA2464T1Q - MOSFET

Description

The μ PA2464T1Q is a switching device, which can be driven directly by a 2.5 V power source.

Features

  • a low on-state resistance and excellent switching characteristics, and is suitable for.

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Full PDF Text Transcription

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μ PA2464T1Q MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0189EJ0100 Rev.1.00 Dec 06, 2010 Description The μ PA2464T1Q is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2464T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features • 2.5 V drive available • Low on-state resistance ⎯ RDS(on)1 = 26.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) ⎯ RDS(on)2 = 27.0 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A) ⎯ RDS(on)3 = 30.0 mΩ MAX. (VGS = 3.1 V, ID = 3.0 A) ⎯ RDS(on)4 = 38.0 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A) • Built-in G-S protection diode against ESD Ordering Information Part No.
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