Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2200T1M
N-CHANNEL MOS FET FOR SWITCHING
DESCRIPTION The μ PA2200T1M is N-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch.
Features
- Low on-state resistance
RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 31 mΩ MAX. (VGS = 4.5 V, ID = 4 A)
- Built-in gate protection diode
- 4.5 V Gate drive available
ORDERING INFORMATION
PART NUMBER
PACKING
PACKAGE
μ PA2200T1M-T1-AT Note μ PA2200T1M-T2-AT Note
8 mm embossed taping 8-pin VSOF (1629)
3000 p/reel
0.011 g TYP.
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
0.225±0.1...