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UPA2201T1M - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description

for power management applications of portable equipments, such as load switch.

Key Features

  • Low on-state resistance RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 V, ID = 9 A) RDS(on)2 = 27 mΩ MAX. (VGS = 2.5 V, ID = 4.5 A).
  • Built-in gate protection diode.
  • 2.5 V Gate drive available.

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Datasheet Details

Part number UPA2201T1M
Manufacturer Renesas
File Size 204.42 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet UPA2201T1M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2201T1M N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The μ PA2201T1M is N-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch. FEATURES • Low on-state resistance RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 V, ID = 9 A) RDS(on)2 = 27 mΩ MAX. (VGS = 2.5 V, ID = 4.5 A) • Built-in gate protection diode • 2.5 V Gate drive available ORDERING INFORMATION PART NUMBER PACKING PACKAGE μ PA2201T1M-T1-AT Note μ PA2201T1M-T2-AT Note 8 mm embossed taping 8-pin VSOF (1629) 3000 p/reel 0.011 g TYP. Note Pb-free (This product does not contain Pb in external electrode and other parts.) 0.225±0.1 PACKAGE DRAWING (Unit: mm) 2.9±0.1 0.65 8 5 A 0.145±0.05 0 to 0.025 1.9±0.1 1.6±0.1 1 0.