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UPA2201T1M - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Product Overview

Renesas

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UPA2201T1M N-CHANNEL MOS FIELD EFFECT TRANSISTOR by Renesas - Datasheet Preview — Datasheet preview – UPA2201T1M

Datasheet Details

Part number	UPA2201T1M
Manufacturer	Renesas
File Size	204.42 KB
Description	N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet	UPA2201T1M Datasheet
Additional preview pages of the UPA2201T1M datasheet.

Product details

Description

for power management applications of portable equipments, such as load switch.

Features

Low on-state resistance RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 V, ID = 9 A) RDS(on)2 = 27 mΩ MAX. (VGS = 2.5 V, ID = 4.5 A).
Built-in gate protection diode.
2.5 V Gate drive available.

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Published: Mar 28, 2016 |