Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2211T1M
P-CHANNEL MOS FET FOR SWITCHING
DESCRIPTION The μ PA2211T1M is P-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch.
Features
- Low on-state resistance
RDS(on)1 = 25 mΩ MAX. (VGS =
- 4.5 V, ID =
- 7.5 A) RDS(on)2 = 34 mΩ MAX. (VGS =
- 2.5 V, ID =
- 3.8 A) RDS(on)3 = 66 mΩ MAX. (VGS =
- 1.8 V, ID =
- 3.8 A)
- Built-in gate protection diode
- - 1.8 V Gate drive available
ORDERING INFORMATION
PART NUMBER μ PA2211T1M-T1-AT Note μ PA2211T1M-T2-AT Note
PACKING 8 mm embossed taping
3000 p/reel
PACKAGE 8-pin VSOF (1629)
0.011 g TYP.
Note Pb-free (This product does not contain...