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UPA2211T1M P-CHANNEL MOS FET

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Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2211T1M P-CHANNEL MOS FET FOR SWITCHING .
The μ PA2211T1M is P-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch.

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Features

* Low on-state resistance RDS(on)1 = 25 mΩ MAX. (VGS =
* 4.5 V, ID =
* 7.5 A) RDS(on)2 = 34 mΩ MAX. (VGS =
* 2.5 V, ID =
* 3.8 A) RDS(on)3 = 66 mΩ MAX. (VGS =
* 1.8 V, ID =
* 3.8 A)
* Built-in gate protection diode
* 1.8 V Ga

UPA2211T1M Distributors

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