UPA2211T1M Datasheet, Fet, Renesas

UPA2211T1M Features

• Fet
• Low on-state resistance RDS(on)1 = 25 mΩ MAX. (VGS =
• 4.5 V, ID =
• 7.5 A) RDS(on)2 = 34 mΩ MAX. (VGS =
• 2.5 V, ID =
• 3.8 A) RDS(on)3 = 66 mΩ MA

PDF File Details

Part number:

UPA2211T1M

Manufacturer:

Renesas ↗

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202.10kb

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📄 Datasheet

Description:

P-channel mos fet. The μ PA2211T1M is P-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as l

UPA2211T1M Application

• Applications of portable equipments, such as load switch. FEATURES
• Low on-state resistance RDS(on)1 = 25 mΩ MAX. (VGS =
• 4.5 V, I

TAGS

UPA2211T1M

Renesas

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