Datasheet Details
- Part number
- UPA2200T1M
- Manufacturer
- Renesas ↗
- File Size
- 291.65 KB
- Datasheet
- UPA2200T1M-Renesas.pdf
- Description
- N-CHANNEL MOS FET
UPA2200T1M Description
DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2200T1M N-CHANNEL MOS FET FOR SWITCHING .
The μ PA2200T1M is N-channel MOS Field Effect Transistor designed
for power management applications of portable equipments, such as load switch.
UPA2200T1M Features
* Low on-state resistance
RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 31 mΩ MAX. (VGS = 4.5 V, ID = 4 A)
* Built-in gate protection diode
* 4.5 V Gate drive available
ORDERING INFORMATION
PART NUMBER
PACKING
PACKAGE
μ PA2200T1M-T1-AT Note μ PA2200T1M-T2-AT No
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