Datasheet4U.com

UPA2200T1M - N-CHANNEL MOS FET

Product Overview

Renesas

📥 Download Datasheet

UPA2200T1M N-CHANNEL MOS FET by Renesas - Datasheet Preview — Datasheet preview – UPA2200T1M

Datasheet Details

Part number	UPA2200T1M
Manufacturer	Renesas
File Size	291.65 KB
Description	N-CHANNEL MOS FET
Datasheet	UPA2200T1M Datasheet
Additional preview pages of the UPA2200T1M datasheet.

Product details

Description

The μ PA2200T1M is N-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch.

Features

Low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 31 mΩ MAX. (VGS = 4.5 V, ID = 4 A).
Built-in gate protection diode.
4.5 V Gate drive available.

📁 Similar Datasheet

UPA2001C - NPN Silicon Epitaxial Darlington Transistor Array (NEC)
UPA2002C - NPN Silicon Epitaxial Darlington Transistor Array (NEC)
UPA2003C - NPN Silicon Epitaxial Darlington Transistor Array (NEC)
UPA2004C - NPN Silicon Epitaxial Darlington Transistor Array (NEC)
UPA2008 - 3W STEREO CLASS-D AUDIO POWER AMPLIFIER (Unisonic Technologies)
UPA2450 - N-Channel MOSFET (NEC)
UPA2450B - N-Channel MOSFET (NEC)
UPA2450C - N-Channel MOSFET (NEC)

Other Datasheets by Renesas

UPA2201T1M - N-CHANNEL MOS FIELD EFFECT TRANSISTOR
UPA2210T1M - P-CHANNEL MOS FET
UPA2211T1M - P-CHANNEL MOS FET
UPA2454 - N-Channel MOSFET
uPA2455 - N-Channel MOSFET
UPA2460T1Q - MOS FIELD EFFECT TRANSISTOR

Published: Aug 3, 2015 |