Datasheet4U Logo Datasheet4U.com

UPA2200T1M

N-CHANNEL MOS FET

UPA2200T1M Features

* Low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 31 mΩ MAX. (VGS = 4.5 V, ID = 4 A)

* Built-in gate protection diode

* 4.5 V Gate drive available ORDERING INFORMATION PART NUMBER PACKING PACKAGE μ PA2200T1M-T1-AT Note μ PA2200T1M-T2-AT No

UPA2200T1M Datasheet (291.65 KB)

Preview of UPA2200T1M PDF

Datasheet Details

Part number:

UPA2200T1M

Manufacturer:

Renesas ↗

File Size:

291.65 KB

Description:

N-channel mos fet.

📁 Related Datasheet

UPA2201T1M - N-CHANNEL MOS FIELD EFFECT TRANSISTOR (Renesas)
DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2201T1M N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The μ PA2201T1M is N-channel MOS Field Effect Transist.

UPA2210T1M - P-CHANNEL MOS FET (Renesas)
DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2210T1M P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The μ PA2210T1M is P-channel MOS Field Effect Transist.

UPA2211T1M - P-CHANNEL MOS FET (Renesas)
DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2211T1M P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The μ PA2211T1M is P-channel MOS Field Effect Transist.

UPA2001C - NPN Silicon Epitaxial Darlington Transistor Array (NEC)
.

UPA2002C - NPN Silicon Epitaxial Darlington Transistor Array (NEC)
.

UPA2003C - NPN Silicon Epitaxial Darlington Transistor Array (NEC)
.

UPA2004C - NPN Silicon Epitaxial Darlington Transistor Array (NEC)
.

UPA2008 - 3W STEREO CLASS-D AUDIO POWER AMPLIFIER (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD UPA2008 Preliminary 3W STEREO CLASS-D AUDIO POWER AMPLIFIER WITH DC VOLUME CONTROL  DESCRIPTION The UTC UPA2008 is.

TAGS

UPA2200T1M N-CHANNEL MOS FET Renesas

Image Gallery

UPA2200T1M Datasheet Preview Page 2 UPA2200T1M Datasheet Preview Page 3

UPA2200T1M Distributor