UPA2200T1M N-CHANNEL MOS FET

Renesas

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2200T1M N-CHANNEL MOS FET FOR SWITCHING .
The μ PA2200T1M is N-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch.

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Datasheet Specifications

Part number: UPA2200T1M
Manufacturer: Renesas ↗
File Size: 291.65 KB
Datasheet: UPA2200T1M-Renesas.pdf
Description: N-CHANNEL MOS FET

Features

* Low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 31 mΩ MAX. (VGS = 4.5 V, ID = 4 A)
* Built-in gate protection diode
* 4.5 V Gate drive available ORDERING INFORMATION PART NUMBER PACKING PACKAGE μ PA2200T1M-T1-AT Note μ PA2200T1M-T2-AT No

UPA2200T1M Distributors

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N-CHANNEL MOS FET Renesas

Renesas UPA2200T1M-like datasheet