UPA2200T1M Datasheet - Renesas

UPA2200T1M N-CHANNEL MOS FET

UPA2200T1M Features

* Low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 31 mΩ MAX. (VGS = 4.5 V, ID = 4 A)

* Built-in gate protection diode

* 4.5 V Gate drive available ORDERING INFORMATION PART NUMBER PACKING PACKAGE μ PA2200T1M-T1-AT Note μ PA2200T1M-T2-AT No

Datasheet Details

UPA2200T1M

291.65 KB

N-channel mos fet.

📁 Related Datasheet

UPA2201T1M N-CHANNEL MOS FIELD EFFECT TRANSISTOR (Renesas)

UPA2210T1M P-CHANNEL MOS FET (Renesas)

UPA2211T1M P-CHANNEL MOS FET (Renesas)

UPA2001C NPN Silicon Epitaxial Darlington Transistor Array (NEC)

UPA2002C NPN Silicon Epitaxial Darlington Transistor Array (NEC)

UPA2003C NPN Silicon Epitaxial Darlington Transistor Array (NEC)

UPA2004C NPN Silicon Epitaxial Darlington Transistor Array (NEC)

UPA2008 3W STEREO CLASS-D AUDIO POWER AMPLIFIER (Unisonic Technologies)

TAGS

UPA2200T1M UPA2200T1M N-CHANNEL MOS FET Renesas

UPA2200T1M Distributor