UPA2200T1M Datasheet, Fet, Renesas

UPA2200T1M Features

• Fet
• Low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 31 mΩ MAX. (VGS = 4.5 V, ID = 4 A)
• Built-in gate protection diode
• 4.5 V Gat

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Part number:

UPA2200T1M

Manufacturer:

Renesas ↗

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291.65kb

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📄 Datasheet

Description:

N-channel mos fet. The μ PA2200T1M is N-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as l

UPA2200T1M Application

• Applications of portable equipments, such as load switch. FEATURES
• Low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 8 A) R

TAGS

UPA2200T1M

Renesas

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