UPA2200T1M Datasheet - Renesas

datasheet Preview Page 1 from Datasheet4u.com

UPA2200T1M N-CHANNEL MOS FET

DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2200T1M N-CHANNEL MOS FET FOR SWITCHING .
The μ PA2200T1M is N-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch.

UPA2200T1M-Renesas.pdf

UPA2200T1M Datasheet Preview — Preview of UPA2200T1M PDF

Datasheet Details

Part number:

UPA2200T1M

Manufacturer:

Renesas ↗

File Size:

291.65 KB

Description:

N-CHANNEL MOS FET

Features

* Low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 31 mΩ MAX. (VGS = 4.5 V, ID = 4 A)
* Built-in gate protection diode
* 4.5 V Gate drive available ORDERING INFORMATION PART NUMBER PACKING PACKAGE μ PA2200T1M-T1-AT Note μ PA2200T1M-T2-AT No

UPA2200T1M Distributors

📁 Related Datasheet

UPA2001C UPA2002C UPA2003C UPA2004C UPA2008 UPA2450

📌 All Tags

UPA2200T1M N-CHANNEL MOS FET Renesas

Renesas UPA2200T1M-like datasheet