Part number:
UPA1855
Manufacturer:
File Size:
114.99 KB
Description:
N-channel mos field effect transistor.
* a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES
* Can be driven by a 2.5 V power source
* Low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2
UPA1855
114.99 KB
N-channel mos field effect transistor.
📁 Related Datasheet
UPA1850 P-CHANNEL MOS FIELD EFFECT TRANSISTOR (NEC)
UPA1851 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING (NEC)
UPA1852 N-CHANNEL MOS FIELD EFFECT TRANSISTOR (NEC)
UPA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR (NEC)
UPA1857 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING (NEC)
UPA1800 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING (NEC)
UPA1801 N-CHANNEL MOS FIELD EFFECT TRANSISTOR (NEC)
UPA1802 N-CHANNEL MOS FIELD EFFECT TRANSISTOR (NEC)
UPA1803 N-CHANNEL MOS FIELD EFFECT TRANSISTOR (NEC)
UPA1804 N-CHANNEL MOS FIELD EFFECT TRANSISTOR (NEC)
