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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1855
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION The µPA1855 is a switching device which can be
driven directly by a 2.5 V power source. The µPA1855 features a low on-state resistance and
excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
FEATURES
• Can be driven by a 2.5 V power source • Low on-state resistance
RDS(on)1 = 23 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 24 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 29 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A) • Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
PACKAGE DRAWING (Unit : mm)
85
1 :Drain1 2, 3 :Source1 4 :Gate1 5 :Gate2 6, 7 :Source2 8 :Drain2
1.2 MAX. 1.0±0.