* Low noise Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA
* High gain Q1 : |S21e|2 = 9.0 dB TYP., Q2 : |S21e|2 = 12.0 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA
* Flat-lead 6-pin thin-type ultra super minimold package
* 2 different built-
UPA831TC
NEC
79.46 KB
Npn silicon epitaxial transistor.
DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA831TC
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTR.
📁 Related Datasheet
uPA831TF NPN SILICON EPITAXIAL TRANSISTOR (Renesas)
UPA832TF NPN SILICON EPITAXIAL TRANSISTOR (NEC)
UPA833TF NPN SILICON EPITAXIAL TRANSISTOR (NEC)
UPA834TF NPN SILICON EPITAXIAL TRANSISTOR (NEC)
UPA835TC NPN SILICON EPITAXIAL TRANSISTOR (NEC)
UPA836TC NPN SILICON EPITAXIAL TWIN TRANSISTOR (NEC)
UPA836TF NPN SILICON EPITAXIAL TRANSISTOR (NEC)
UPA800T NPN Transistor (NEC)
UPA800TF NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)
UPA801T NPN Transistor (INCHANGE)
