UPA831TC NPN SILICON EPITAXIAL TRANSISTOR

NEC

Description

DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA831TC NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTR.
The µPA831TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. Low noise.

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Datasheet Specifications

Part number: UPA831TC
Manufacturer: NEC
File Size: 79.46 KB
Datasheet: UPA831TC_NEC.pdf
Description: NPN SILICON EPITAXIAL TRANSISTOR

Features

* Low noise Q1 : NF = 1.2 dB TYP. , Q2 : NF = 1.4 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA
* High gain Q1 : |S21e|2 = 9.0 dB TYP. , Q2 : |S21e|2 = 12.0 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA
* Flat-lead 6-pin thin-type ultra super minimold package
* 2 different built-

UPA831TC Distributors

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UPA831TC NPN SILICON EPITAXIAL TRANSISTOR NEC

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