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UPA836TC NPN SILICON EPITAXIAL TWIN TRANSISTOR

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Description

PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA836TC .
The UPA836TC contains one NE685 and one NE688 NPN high frequency silicon bipolar chip.

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Datasheet Specifications

Part number
UPA836TC
Manufacturer
NEC
File Size
16.72 KB
Datasheet
UPA836TC_NEC.pdf
Description
NPN SILICON EPITAXIAL TWIN TRANSISTOR

Features

* SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package LOW HEIGHT PROFILE: Just 0.55 mm high FLAT LEAD STYLE: Reduced lead inductance improves electrical performance TWO DIFFERENT DIE TYPES: Q1 - Ideal oscillator transistor Q2 - Ideal buffer amplifier transis

Applications

* where reducing board space is a prime consideration. Each transistor chip is independently mounted and easily configured for oscillator/buffer amplifier and other applications. 0.55±0.05 0.11+0.1 -0.05 Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to righ

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