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UPA835TC - NPN SILICON EPITAXIAL TRANSISTOR

NEC

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Datasheet Details

Part number	UPA835TC
Manufacturer	NEC
File Size	71.64 KB
Description	NPN SILICON EPITAXIAL TRANSISTOR
Datasheet	UPA835TC_NEC.pdf

UPA835TC Product details

Description

The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.

Features

Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA.
High gain Q1 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA Q2 : |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA.
Flat-lead 6-pin thin-type ultra super minimold package.
Built-in 2 different transistors (2SC5010, 2SC5006) BUILT-IN.

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Published: Apr 17, 2005 |