UPA835TC NPN SILICON EPITAXIAL TRANSISTOR

NEC

Description

DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA835TC NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTR.
The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. Low noise.

📥 Download Datasheet

UPA835TC Datasheet Preview — Preview of UPA835TC PDF

Datasheet Specifications

Part number: UPA835TC
Manufacturer: NEC
File Size: 71.64 KB
Datasheet: UPA835TC_NEC.pdf
Description: NPN SILICON EPITAXIAL TRANSISTOR

Features

* Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
* High gain Q1 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA Q2 : |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
* Flat-lead 6-pin

UPA835TC Distributors

📁 Related Datasheet

uPA831TF UPA801T UPA805T UPA806 UPA810T UPA814T

📌 All Tags

UPA835TC NPN SILICON EPITAXIAL TRANSISTOR NEC

NEC UPA835TC-like datasheet