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UPC2758T - SILICON MMIC 1st FREQUENCY DOWN-CONVERTER

Description

band mobile communications.

The ICs consist of mixer and local amplifier.

Features

  • low current consumption and the µPC2758T features improved intermodulation. From these two version, you can chose either IC corresponding to your system design. The µPC2757T and µPC2758T are manufactured using NEC’s 20 GHz fT NESAT™ III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion and migration. Thus, these products have excellent performance, uniformity and.

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Datasheet Details

Part number UPC2758T
Manufacturer NEC
File Size 118.34 KB
Description SILICON MMIC 1st FREQUENCY DOWN-CONVERTER
Datasheet download datasheet UPC2758T Datasheet

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Full PDF Text Transcription

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DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2757T, µPC2758T SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC2757T and µPC2758T are silicon monolithic integrated circuits designed as 1st down-converters for L band mobile communications. The ICs consist of mixer and local amplifier. The µPC2757T features low current consumption and the µPC2758T features improved intermodulation. From these two version, you can chose either IC corresponding to your system design. The µPC2757T and µPC2758T are manufactured using NEC’s 20 GHz fT NESAT™ III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion and migration.
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