Datasheet4U Logo Datasheet4U.com

UPD16803 - MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT

Description

The µPD16803 is a monolithic dual H bridge driver circuit which uses N-channel power MOS FETs in its driver stage.

Features

  • Low ON resistance (sum of ON resistors of top and bottom transistors) RON1 = 1.5 Ω TYP. (VM = 5.0 V) RON2 = 2.0 Ω TYP. (VM = 12.0 V).
  • Low current consumption: IDD = 0.4 mA TYP.
  • Stop mode function that turns OFF all output transistors.
  • Compact surface mount package: 20-pin plastic SOP (300 mil) PIN.

📥 Download Datasheet

Datasheet preview – UPD16803

Datasheet Details

Part number UPD16803
Manufacturer NEC
File Size 97.40 KB
Description MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT
Datasheet download datasheet UPD16803 Datasheet
Additional preview pages of the UPD16803 datasheet.

📁 Similar Datasheet

  • UPD168104 - 6-CHANNEL OPERATIONAL AMPLIFIER (Renesas)
  • uPD168110 - MICROSTEP DRIVER (Renesas)
  • uPD16818 - MONOLITHIC DUAL H-BRIDGE DRIVER (Renesas)
  • uPD16836 - THREE-PHASE SPINDLE MOTOR DRIVER (Renesas)
  • UPD16876 - Single Pch High-Side Switch for USB (NEC Electronics)
  • UPD160032A - 480-OUTPUT TFT-LCD SOURCE DRIVER (Renesas)
  • uPD160088 - 480-OUTPUT TFT-LCD SOURCE DRIVER (Renesas)
  • UPD160300 - 192-BIT AC-PDP DRIVER (NEC Electronics)
  • uPD161608 - 176-RGB x 220-DOT 1-CHIP DRIVER (Renesas)
  • uPD161802 - 240 OUTPUTS TFT-LCD SOURCE DRIVER (Renesas)
Other Datasheets by NEC
  • UPD168001 - MONOLITHIC 4-CHANNEL H BRIDGE LOW-SIDE SWITCH
  • UPD168002 - MONOLITHIC 6-CHANNEL H-BRIDGE DRIVER
  • UPD16804 - MONOLITHIC H BRIDGE DRIVER CIRCUIT
  • UPD16805 - MONOLITHIC H BRIDGE DRIVER CIRCUIT
  • UPD16808 - MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT
  • UPD168102 - MONOLITHIC 6-CHANNEL H-BRIDGE DRIVER
  • UPD168113 - SERIAL CONTROL 7-CHANNEL H-BRIDGE DRIVER
  • UPD168116A - 7-CHANNEL H-BRIDGE DRIVER

Full PDF Text Transcription

Click to expand full text
DATA SHEET MOS INTEGRATED CIRCUIT µPD16803 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16803 is a monolithic dual H bridge driver circuit which uses N-channel power MOS FETs in its driver stage. By employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage and power consumption as compared with conventional driver circuits that use bipolar transistors. In addition, the drive current can be adjusted by an external resistor in a power-saving mode. The µPD16803 is therefore ideal as the driver circuit of the 2-phase excitation, bipolar-driven stepping motor for the head actuator of an FDD. FEATURES • Low ON resistance (sum of ON resistors of top and bottom transistors) RON1 = 1.5 Ω TYP. (VM = 5.0 V) RON2 = 2.
Published: |