Datasheet4U Logo Datasheet4U.com

UPD16804 - MONOLITHIC H BRIDGE DRIVER CIRCUIT

General Description

The µPD16804 is a monolithic H bridge driver IC which uses low-ON resistance power MOS FETs in its driver stage.

This driver has a forward, reverse, and brake functions and is ideal for the driver circuit of motors for camera that advance or rewind the film, and auto focusing or zooming.

Key Features

  • High drive current IDR = 3 A MAX. at PW ≤ 200 ms (single pulse) IDR = 0.5 A (DC).
  • Low-ON resistance (sum of ON resistances of top and bottom MOS FET) RON = 0.6 Ω TYP. at IDR = 0.5 A.
  • Standby function that turns OFF charge pump circuit.
  • Compact surface mount package 16-pin plastic SOP (300 mil) PIN.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
UPD168104 6-CHANNEL OPERATIONAL AMPLIFIER Renesas
uPD168110 MICROSTEP DRIVER Renesas
uPD16818 MONOLITHIC DUAL H-BRIDGE DRIVER Renesas
uPD16836 THREE-PHASE SPINDLE MOTOR DRIVER Renesas
UPD16876 Single Pch High-Side Switch for USB NEC Electronics

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
UPD168001 MONOLITHIC 4-CHANNEL H BRIDGE LOW-SIDE SWITCH
UPD168002 MONOLITHIC 6-CHANNEL H-BRIDGE DRIVER
UPD16803 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT
UPD16805 MONOLITHIC H BRIDGE DRIVER CIRCUIT
UPD16808 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS INTEGRATED CIRCUIT µPD16804 MONOLITHIC H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16804 is a monolithic H bridge driver IC which uses low-ON resistance power MOS FETs in its driver stage. This driver has a forward, reverse, and brake functions and is ideal for the driver circuit of motors for camera that advance or rewind the film, and auto focusing or zooming. This IC supports a drive current of up to 0.5 A (DC). FEATURES • High drive current IDR = 3 A MAX. at PW ≤ 200 ms (single pulse) IDR = 0.5 A (DC) • Low-ON resistance (sum of ON resistances of top and bottom MOS FET) RON = 0.6 Ω TYP. at IDR = 0.