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UPD16808

Manufacturer: NEC (now Renesas Electronics)

UPD16808 datasheet by NEC (now Renesas Electronics).

UPD16808 datasheet preview

UPD16808 Datasheet Details

Part number UPD16808
Datasheet UPD16808_NEC.pdf
File Size 96.88 KB
Manufacturer NEC (now Renesas Electronics)
Description MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT
UPD16808 page 2 UPD16808 page 3

UPD16808 Overview

The µPD16808 is a monolithic dual H bridge driver circuit which employing N-channel power MOS FETs for its driver stage. By using the power MOS FETs for the output stage, saturation voltage and power consumption are substantially improved as pared with conventional driver circuits that use bipolar transistors. Because the dual H bridge driver circuits at the output stage are independent of each other, this IC is...

UPD16808 Key Features

  • Low ON resistance (sum of ON resistors of top and bottom FETS) RON1 = 1.0 Ω TYP. (VM = 5.0 V) RON2 = 1.5 Ω TYP. (VM = 12
  • Low current consumption: IDD = 0.4 mA TYP
  • Four input modes independently controlling dual H bridge drivers (with 1- to 2-phase excitation selected)
  • Motor voltage 12 V/5 V patible
  • pact surface mount package: 20-pin plastic SOP (300 mil)
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UPD16808 Distributor

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