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UPD16808 Datasheet Monolithic Dual H Bridge Driver Circuit

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET MOS INTEGRATED CIRCUIT µPD16808 MONOLITHIC DUAL H BRIDGE DRIVER.

General Description

The µPD16808 is a monolithic dual H bridge driver circuit which employing N-channel power MOS FETs for its driver stage.

By using the power MOS FETs for the output stage, saturation voltage and power consumption are substantially improved as pared with conventional driver circuits that use bipolar transistors.

Because the dual H bridge driver circuits at the output stage are independent of each other, this IC is ideal as the driver circuit for a 1- to 2-phase excitation bipolar driving stepping motor for the head actuator of an FDD.

Key Features

  • Low ON resistance (sum of ON resistors of top and bottom FETS) RON1 = 1.0 Ω TYP. (VM = 5.0 V) RON2 = 1.5 Ω TYP. (VM = 12.0 V).
  • Low current consumption: IDD = 0.4 mA TYP.
  • Four input modes independently controlling dual H bridge drivers (with 1- to 2-phase excitation selected).
  • Motor voltage 12 V/5 V compatible.
  • Compact surface mount package: 20-pin plastic SOP (300 mil) PIN.

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
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UPD16808 Distributor