* Pin compatible with NOR Flash Memory
* Word organization 2,097,152 words by 8 bits (BYTE mode) 1,048,576 words by 16 bits (WORD mode)
* Operating supply voltage : VCC = 2.7 V to 3.6 V Operating supply voltage VCC 3.0 V ± 0.3 V 3.3 V ± 0.3 V Access time ns (MAX.) 90 85 Power
UPD23C16300 Datasheet (242.32 KB)
UPD23C16300
NEC
242.32 KB
16m-bit mask-programmable rom.
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD23C16300
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE)
Descriptio.
📁 Related Datasheet
UPD23C16340 - (UPD23C16340 / UPD23C16380) 16M-BIT MASK-PROGRAMMABLE ROM
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DATA SHEET
MOS INTEGRATED CIRCUIT
µPD23C16340, 23C16380
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE) P.
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DATA SHEET
MOS INTEGRATED CIRCUIT
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(NEC)
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD23C16000BL
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE)
Descript.
UPD23C16040BL - (UPD23C16040BL / UPD23C16080BL) 16M-BIT MASK-PROGRAMMABLE ROM
(NEC)
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD23C16040BL, 23C16080BL
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MOD.
UPD23C16080BL - (UPD23C16040BL / UPD23C16080BL) 16M-BIT MASK-PROGRAMMABLE ROM
(NEC)
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD23C16040BL, 23C16080BL
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MOD.
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UPD23C1000EA - Mask Programmable CMOS ROM
(NEC Electronics)
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UPD23C1001E - Mask Programmable CMOS ROM
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