UPD416-3 - 16384 x 1 Bit DYNAMIC NMOS RAM
NEe Microcomputers, Inc.
18384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY NEe f' PD416 P.
PD416 1 f' PD416 2 f'PD416 3 J.L PD416 5 DESCPIIIPTION The NECI1PD416 is a 16384 words by 1 bit Dynamic MOS RAM.
It is designed for memory applications where very low cost and large bit storage are important design objectives.
The I1PD416 .is fabr,icated using a double-poly-layer N channel silicon gate process which affords high -storage cell density and high performance.
The use of dynamic
