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UPD416-3, UPD416 16384 x 1 Bit DYNAMIC NMOS RAM

UPD416-3 Description

NEe Microcomputers, Inc.18384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY NEe f' PD416 P.PD416 *1 f' PD416 *2 f'PD416 *3 J.L PD416 *5 DES.

UPD416-3 Applications

* where very low cost and large bit storage are important design objectives. The I1PD416 . is fabr,icated using a double-poly-layer N channel silicon gate process which affords high -storage cell density and high performance. The use of dynamic circuitry throughout, including the sense amplifiers, assu

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This datasheet PDF includes multiple part numbers: UPD416-3, UPD416. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
UPD416-3, UPD416
Manufacturer
NEC
File Size
517.43 KB
Datasheet
UPD416_NEC.pdf
Description
16384 x 1 Bit DYNAMIC NMOS RAM
Note
This datasheet PDF includes multiple part numbers: UPD416-3, UPD416.
Please refer to the document for exact specifications by model.

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16384 Bit DYNAMIC NMOS RAM NEC
NEC UPD416-3-like datasheet