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UPD416-3, UPD416 Datasheet - NEC

UPD416-3 - 16384 x 1 Bit DYNAMIC NMOS RAM

NEe Microcomputers, Inc.

18384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY NEe f' PD416 P.

PD416 1 f' PD416 2 f'PD416 3 J.L PD416 5 DESCPIIIPTION The NECI1PD416 is a 16384 words by 1 bit Dynamic MOS RAM.

It is designed for memory applications where very low cost and large bit storage are important design objectives.

The I1PD416 .is fabr,icated using a double-poly-layer N channel silicon gate process which affords high -storage cell density and high performance.

The use of dynamic

UPD416_NEC.pdf

This datasheet PDF includes multiple part numbers: UPD416-3, UPD416. Please refer to the document for exact specifications by model.
UPD416-3 Datasheet Preview Page 2 UPD416-3 Datasheet Preview Page 3

Datasheet Details

Part number:

UPD416-3, UPD416

Manufacturer:

NEC

File Size:

517.43 KB

Description:

16384 x 1 bit dynamic nmos ram.

Note:

This datasheet PDF includes multiple part numbers: UPD416-3, UPD416.
Please refer to the document for exact specifications by model.

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