Datasheet Specifications
- Part number
- UPD416
- Manufacturer
- NEC
- File Size
- 517.43 KB
- Datasheet
- UPD416_NEC.pdf
- Description
- 16K x 1-Bit DYNAMIC NMOS RAM
Description
NEe Microcomputers, Inc.18384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY NEe f' PD416 P.PD416 *1 f' PD416 *2 f'PD416 *3 J.L PD416 *5 DES.Applications
* where very low cost and large bit storage are important design objectives. The I1PD416 . is fabr,icated using a double-poly-layer N channel silicon gate process which affords high -storage cell density and high performance. The use of dynamic circuitry throughout, including the sense amplifiers, assuUPD416 Distributors
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