UPD44165084 - (UPD44165084/184/364) 18M-BIT QDRII SRAM 4-WORD BURST OPERATION

NEC

UPD44165084 Datasheet Preview — Preview of UPD44165084 PDF

Datasheet Details

Part number	UPD44165084
Manufacturer	NEC
File Size	392.16 KB
Description	(UPD44165084/184/364) 18M-BIT QDRII SRAM 4-WORD BURST OPERATION
Datasheet	UPD44165084_NEC.pdf

UPD44165084 Product details

Description

The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the µPD44165364 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.The µPD44165084, µPD44165184 and µPD44165364 integrates unique synchronous peripheral circuitry and a burst counter.All input registers controlled by an input clock pair (K and /K) are latched on the positive edge of K and /K.These pr

Features

1.8 ± 0.1 V power supply and HSTL I/O.
DLL circuitry for wide output data valid window and future frequency scaling.
Separate independent read and write data ports with concurrent transactions.
100% bus utilization DDR READ and WRITE operation.
Four-tick burst for reduced address frequency.
Two input clocks (K and /K) for precise DDR timing at clock rising edges only.
Two output clocks (C and /C) for precise flight time and clock sk.

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Other Datasheets by NEC

UPD44165082 - (UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION
UPD44165182 - (UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION
UPD44165184 - (UPD44165084/184/364) 18M-BIT QDRII SRAM 4-WORD BURST OPERATION
UPD44165362 - (UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION
UPD44165364 - (UPD44165084/184/364) 18M-BIT QDRII SRAM 4-WORD BURST OPERATION
UPD4416001 - 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT

Published: Feb 16, 2006 |