UPD444008L
NEC
102.16kb
4m-bit cmos fast sram 512k-word by 8-bit. The µPD444008L is a high speed, low power, 4,194,304 bits (524,288 words by 8 bits) CMOS static RAM. Operating supply voltage is 3.3
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📁 Related Datasheet
UPD444008 - 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT
(NEC)
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444008
4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT
Description
The µPD444008 is a high speed, low power, 4,194,3.
UPD444001 - 4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT
(NEC)
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444001
4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT
Description
The µPD444001 is a high speed, low power, 4,194,304.
UPD444004 - 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT
(NEC)
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444004
4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT
Description
The µPD444004 is a high speed, low power, 4,194,304.
UPD444004L - 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT
(NEC)
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444004L
4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT
Description
The µPD444004L is a high speed, low power, 4,194,3.
UPD444012A-X - 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
(NEC)
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444012A-X
4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
Description
The µPD444012A-.
UPD444016 - 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT
(NEC)
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444016
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT
Description
The µPD444016 is a high speed, low power, 4,194,.
UPD444016-Y - 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
(NEC)
PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444016-Y
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
Description
The.
UPD444016L - 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT
(NEC)
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444016L
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT
Description
The µPD444016L is a high speed, low power, 4,19.
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