512K-WORD datasheet | Specifications & PDF Download

LC331632M-10 - 512K (32768 words X 16 bits) Pseudo-SRAM

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IS42S16100C1 - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

IS42S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM SEPTEMBER 2009 FEATURES • Clock frequency: 200, 166, 143 MHz • Ful

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Integrated Silicon Solution

IS45S16100E - 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM

IS42S16100E IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM JUNE 2010 FEATURES • Clock frequency: 200, 166, 143 MHz • Fu

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Integrated Silicon Solution

IS42VS16100D - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

IS42VS16100D 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM ISSI DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42VS16100D is organized

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ISSI

IS42VS16100F - 512K Words x 16 Bits x 2 Banks 16Mb SDRAM

IS42/45S16100F, IS42VS16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM JUNE 2012 FEATURES • Clock frequency: IS42/45S16100F: 200, 166, 143 MHz

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ISSI

IS42S16100F - 512K Words x 16 Bits x 2 Banks 16Mb SDRAM

IS42/45S16100F, IS42VS16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM JUNE 2012 FEATURES • Clock frequency: IS42/45S16100F: 200, 166, 143 MHz

(20 views)

Integrated Silicon Solution

IS42S16100 - 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM

IS42S16100 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM FEBRUARY 2008 FEATURES • Clock frequency: 200, 166, 143 MHz • Fully

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ISSI

IS42S16100A1 - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

IS42S16100A1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 166, 143, 100 MHz • Fully synchronous; all s

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ISSI

IS45S16100F - 512K Words x 16 Bits x 2 Banks 16Mb SDRAM

IS42/45S16100F, IS42VS16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM JUNE 2012 FEATURES • Clock frequency: IS42/45S16100F: 200, 166, 143 MHz

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OKI

MR27T802F - 512k-Word x 16-Bit or 1M-Word x 8-Bit P2ROM

OKI Semiconductor MR27T802F P2ROM512k–Word × 16–Bit or 1M–Word × 8–Bit FEDR27T802F-02-05 Issue Date: Dec. 28, 2004 FEATURES ·512k-word × 16-bit / 1

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Sanyo

LC33864PM-80 - 512K (65536 words X 8 bits) Pseudo-SRAM

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Cypress Semiconductor

CY7C1512KV18 - 72-Mbit QDR II SRAM Two-Word Burst Architecture

CY7C1525KV18 CY7C1512KV18 CY7C1514KV18 72-Mbit QDR® II SRAM Two-Word Burst Architecture 72-Mbit QDR® II SRAM Two-Word Burst Architecture Features ■ S

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Sanyo

LC331632M-12 - 512K (32768 words X 16 bits) Pseudo-SRAM

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Integrated Silicon Solution

IS45S16100C1 - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

IS45S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 143 MHz • Fully synchronous; all signals ref

(14 views)

Integrated Silicon Solution

IS42S16100E - 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM

IS42S16100E IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM JUNE 2010 FEATURES • Clock frequency: 200, 166, 143 MHz • Fu

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Cypress Semiconductor

CY62148G - 4-Mbit (512K words x 8 bit) Static RAM

CY62148G MoBL® 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting C

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Integrated Silicon Solution

IS42VS16100C1 - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

IS42VS16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 100 MHz • Fully synchronous; all signals re

(13 views)