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CY7C1049GE

4-Mbit (512K words x 8 bit) Static RAM

CY7C1049GE Features

* High speed

* tAA = 10 ns

* Embedded ECC for single-bit error correction[1]

* Low active and standby currents

* Active current: ICC = 38 mA typical

* Standby current: ISB2 = 6 mA typical

* Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V

CY7C1049GE General Description

CY7C1049G and CY7C1049GE are high-performance CMOS fast static RAM devices with embedded ECC. Both devices are offered in single and dual chip-enable options and in multiple pin configurations. The CY7C1049GE device includes an ERR pin that signals an error-detection and correction event during a r.

CY7C1049GE Datasheet (778.19 KB)

Preview of CY7C1049GE PDF

Datasheet Details

Part number:

CY7C1049GE

Manufacturer:

Cypress Semiconductor

File Size:

778.19 KB

Description:

4-mbit (512k words x 8 bit) static ram.
CY7C1049G CY7C1049GE 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (512K words × 8 bit) Static RAM with Error-Correc.

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TAGS

CY7C1049GE 4-Mbit 512K words bit Static RAM Cypress Semiconductor

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