CY7C1041GE
Features
- High speed
- t AA = 10 ns / 15 ns
- Embedded ECC for single-bit error correction[1]
- Low active and standby currents
- Active current: ICC = 38-m A typical
- Standby current: ISB2 = 6-m A typical
- Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V
- 1.0-V data retention
- TTL-patible inputs and outputs
- Error indication (ERR) pin to indicate 1-bit error detection and correction
- Pb-free 44-pin SOJ, 44-pin TSOP II, and 48-ball VFBGA packages
Functional Description
CY7C1041G and CY7C1041GE are high-performance CMOS fast static RAM devices with embedded ECC. Both devices are offered in single and dual chip-enable options and in multiple pin configurations. The CY7C1041GE device includes an ERR pin that signals an error-detection and correction event during a read cycle.
Data writes are performed by asserting the Chip Enable (CE) and Write Enable (WE) inputs LOW, while providing the data on I/O0 through I/O15 and address on A0 through A17 pins. The...
