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CY7C1041G - 4-Mbit (256K words x 16 bit) Static RAM

General Description

CY7C1041G and CY7C1041GE are high-performance CMOS fast static RAM devices with embedded ECC.

Both devices are offered in single and dual chip-enable options and in multiple pin configurations.

Key Features

  • High speed.
  • tAA = 10 ns / 15 ns.
  • Embedded ECC for single-bit error correction[1].
  • Low active and standby currents.
  • Active current: ICC = 38-mA typical.
  • Standby current: ISB2 = 6-mA typical.
  • Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V.
  • 1.0-V data retention.
  • TTL-compatible inputs and outputs.
  • Error indication (ERR) pin to indicate 1-bit error detection and correction.
  • Pb-free 44-pin SOJ, 44-pin TSOP II, and 48.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY7C1041G CY7C1041GE 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features ■ High speed ❐ tAA = 10 ns / 15 ns ■ Embedded ECC for single-bit error correction[1] ■ Low active and standby currents ❐ Active current: ICC = 38-mA typical ❐ Standby current: ISB2 = 6-mA typical ■ Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V ■ 1.0-V data retention ■ TTL-compatible inputs and outputs ■ Error indication (ERR) pin to indicate 1-bit error detection and correction ■ Pb-free 44-pin SOJ, 44-pin TSOP II, and 48-ball VFBGA packages Functional Description CY7C1041G and CY7C1041GE are high-performance CMOS fast static RAM devices with embedded ECC.