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CY7C1041GE Datasheet

Manufacturer: Cypress (now Infineon)
CY7C1041GE datasheet preview

CY7C1041GE Details

Part number CY7C1041GE
Datasheet CY7C1041GE / CY7C1041G Datasheet PDF (Download)
File Size 563.41 KB
Manufacturer Cypress (now Infineon)
Description 4-Mbit (256K words x 16 bit) Static RAM
CY7C1041GE page 2 CY7C1041GE page 3

CY7C1041GE Overview

CY7C1041G and CY7C1041GE are high-performance CMOS fast static RAM devices with embedded ECC. Both devices are offered in single and dual chip-enable options and in multiple pin configurations. The CY7C1041GE device includes an ERR pin that signals an error-detection and correction event during a read cycle.

CY7C1041GE Key Features

  • High speed
  • tAA = 10 ns / 15 ns
  • Embedded ECC for single-bit error correction[1]
  • Low active and standby currents
  • Active current: ICC = 38-mA typical
  • Standby current: ISB2 = 6-mA typical
  • Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V
  • 1.0-V data retention
  • TTL-patible inputs and outputs
  • Error indication (ERR) pin to indicate 1-bit error detection and correction

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