CY7C1041GN Overview
CY7C1041GN is high-performance CMOS fast static RAM Organized as 256K words by 16-bits. Data writes are performed by asserting the Chip Enable (CE) and Write Enable (WE) inputs LOW, while providing the data on I/O0 through I/O15 and address on A0 through A17 pins. The Byte High Enable (BHE) and Byte Low Enable (BLE) inputs control write operations to the upper and lower bytes of the specified memory location.
CY7C1041GN Key Features
- High speed
- tAA = 10 ns / 15 ns
- Low active and standby currents
- Active current: ICC = 38-mA typical
- Standby current: ISB2 = 6-mA typical
- Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V
- 1.0-V data retention
- TTL-patible inputs and outputs
- Pb-free 44-pin SOJ, 44-pin TSOP II, and 48-ball VFBGA packages
- The device is deselected (CE HIGH)
