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CY7C1041GN - 4-Mbit (256K words x 16 bit) Static RAM

General Description

CY7C1041GN is high-performance CMOS fast static RAM Organized as 256K words by 16-bits.

Data writes are performed by asserting the Chip Enable (CE) and Write Enable (WE) inputs LOW, while providing the data on I/O0 through I/O15 and address on A0 through A17 pins.

Key Features

  • High speed.
  • tAA = 10 ns / 15 ns.
  • Low active and standby currents.
  • Active current: ICC = 38-mA typical.
  • Standby current: ISB2 = 6-mA typical.
  • Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V.
  • 1.0-V data retention.
  • TTL-compatible inputs and outputs.
  • Pb-free 44-pin SOJ, 44-pin TSOP II, and 48-ball VFBGA packages Functional.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY7C1041GN 4-Mbit (256K words × 16 bit) Static RAM 4-Mbit (256K words × 16 bit) Static RAM Features ■ High speed ❐ tAA = 10 ns / 15 ns ■ Low active and standby currents ❐ Active current: ICC = 38-mA typical ❐ Standby current: ISB2 = 6-mA typical ■ Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V ■ 1.0-V data retention ■ TTL-compatible inputs and outputs ■ Pb-free 44-pin SOJ, 44-pin TSOP II, and 48-ball VFBGA packages Functional Description CY7C1041GN is high-performance CMOS fast static RAM Organized as 256K words by 16-bits. Data writes are performed by asserting the Chip Enable (CE) and Write Enable (WE) inputs LOW, while providing the data on I/O0 through I/O15 and address on A0 through A17 pins.