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CY7C1041GN Datasheet - Cypress

4-Mbit (256K words x 16 bit) Static RAM

CY7C1041GN Features

* High speed

* tAA = 10 ns / 15 ns

* Low active and standby currents

* Active current: ICC = 38-mA typical

* Standby current: ISB2 = 6-mA typical

* Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V

* 1.0-V data retention

* TTL-compatible inp

CY7C1041GN General Description

CY7C1041GN is high-performance CMOS fast static RAM Organized as 256K words by 16-bits. Data writes are performed by asserting the Chip Enable (CE) and Write Enable (WE) inputs LOW, while providing the data on I/O0 through I/O15 and address on A0 through A17 pins. The Byte High Enable (BHE) and Byt.

CY7C1041GN Datasheet (1.74 MB)

Preview of CY7C1041GN PDF

Datasheet Details

Part number:

CY7C1041GN

Manufacturer:

Cypress

File Size:

1.74 MB

Description:

4-mbit (256k words x 16 bit) static ram.

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CY7C1041GN 4-Mbit 256K words bit Static RAM Cypress

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