IS45S16100C1 Datasheet - Integrated Silicon Solution

IS45S16100C1 - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

ISSI’s 16Mb Synchronous DRAM IS45S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. PIN CONFIGURATIONS 50-.

IS45S16100C1 Features

* Clock frequency: 143 MHz

* Fully synchronous; all signals referenced to a positive clock edge

* Two banks can be operated simultaneously and independently

* Dual internal bank controlled by A11 (bank select)

* Single 3.3V power supply

* LVTTL interfa

IS45S16100C1_IntegratedSiliconSolution.pdf