IS45S16160D 256-MBIT SYNCHRONOUS DRAM

Integrated Silicon Solution

Description

IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D www.DataSheet4U.com 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM .
A0-A12 A0-A9 BA0, BA1 DQ0 to DQ7 CLK CKE CS RAS CAS Row Address Input Column Address Input Bank Select Address Data I/O System Cl.

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Datasheet Specifications

Part number: IS45S16160D
Manufacturer: Integrated Silicon Solution
File Size: 915.75 KB
Datasheet: IS45S16160D_IntegratedSiliconSolution.pdf
Description: 256-MBIT SYNCHRONOUS DRAM

Features

* Clock frequency: 166, 143 MHz
* Fully synchronous; all signals referenced to a positive clock edge
* Internal bank for hiding row access/precharge
* Single Power supply: 3.3V + 0.3V
* LVTTL interface
* Programmable burst length
* (1, 2

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IS45S16160D 256-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution

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