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UPD4482323, UPD4482163 (UPD4482163/2183/2323/2363) 8M-BIT CMOS SYNCHRONOUS FAST SRAM

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Description

DATA SHEET MOS INTEGRATED CIRCUIT µPD4482163, 4482183, 4482323, 4482363 8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT .
The µPD4482163 is a 524,288-word by 16-bit, the µPD4482183 is a 524,288-word by 18-bit, µPD4482323 is a 262,144word by 32-bit and the µPD4482363 is a.

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This datasheet PDF includes multiple part numbers: UPD4482323, UPD4482163. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
UPD4482323, UPD4482163
Manufacturer
NEC
File Size
300.53 KB
Datasheet
UPD4482163_NEC.pdf
Description
(UPD4482163/2183/2323/2363) 8M-BIT CMOS SYNCHRONOUS FAST SRAM
Note
This datasheet PDF includes multiple part numbers: UPD4482323, UPD4482163.
Please refer to the document for exact specifications by model.

Features

* Single 3.3 V power supply
* Synchronous operation
* Operating temperature : TA = 0 to 70 °C (-A44, -A50, -A60) TA =
* 40 to +85 °C (-A44Y, -A50Y, -A60Y)
* Internally self-timed write control
* Burst read / write : Interleaved burst and linear burst se

Applications

* which require synchronous operation, high speed, low voltage, high density and wide bit configuration, such as cache and buffer memory. ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”). In the “Sleep” state, the SRAM internal state is pres

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