Preliminary User’s Manual VR4102™ 64/32-bit Microprocessor PPD30102 Document No.
U12739EJ2V0UM00 (2nd edition) Date Published January 1998 N CP(K) © 1997 © MIPS Technologies, Inc.
1996 Printed in Japan [MEMO] 2 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation.
Steps must be taken to stop generation of static electricity as much as
