VR4J Datasheet - Toshiba Semiconductor

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VR4J TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)

TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J,TVR4N High Speed Rectifier Applications (fast recovery) Unit: mm Repetitive Peak .

VR4J_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

VR4J

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

120.00 KB

Description:

TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)

Applications

* (fast recovery) Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) Reverse Recovery Time: trr = 20 µs Plastic Mold Type.
* Maximum Ratings (Ta = 25°C) Characteristics Repetitive peak reverse voltage TVR4J TVR4N Sy

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VR4J TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications fast recovery Toshiba Semiconductor

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