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VR4J Datasheet - Toshiba Semiconductor

VR4J TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)

TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J,TVR4N High Speed Rectifier Applications (fast recovery) Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) Reverse Recovery Time: trr = 20 µs Plastic Mold Type. Maximum Ratings (Ta = 25°C) Characteristics Repetitive peak reverse voltage TVR4J TVR4N Symbol VRRM IF (AV) IFSM Tj Tstg Rating 600 1000 1.2 100 (50 Hz) -40 to 150 -40 to 150 Unit V.

VR4J_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

VR4J

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

120.00 KB

Description:

Toshiba fast recovery diode silicon diffused type high speed rectifier applications (fast recovery).

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VR4J VR4J TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications fast recovery Toshiba Semiconductor

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