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VR4J Datasheet - Toshiba Semiconductor

VR4J - TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)

TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J,TVR4N High Speed Rectifier Applications (fast recovery) Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) Reverse Recovery Time: trr = 20 µs Plastic Mold Type.

Maximum Ratings (Ta = 25°C) Characteristics Repetitive peak reverse voltage TVR4J TVR4N Symbol VRRM IF (AV) IFSM Tj Tstg Rating 600 1000 1.2 100 (50 Hz) -40 to 150 -40 to 150 Unit V

VR4J_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

VR4J

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

120.00 KB

Description:

Toshiba fast recovery diode silicon diffused type high speed rectifier applications (fast recovery).

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