Datasheet4U Logo Datasheet4U.com

PP2H06BK Datasheet - NIKO-SEM

PP2H06BK N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Enhancement Mode PP2H06BK Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 2.8mΩ ID 131A D G S D DDD #1 S S S G G. GATE D. DRAIN S. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Continuous Drain Current TA = 25 °C TA = 70 °C Avalanche Current .

PP2H06BK Datasheet (373.38 KB)

Preview of PP2H06BK PDF
PP2H06BK Datasheet Preview Page 2 PP2H06BK Datasheet Preview Page 3

Datasheet Details

Part number:

PP2H06BK

Manufacturer:

NIKO-SEM

File Size:

373.38 KB

Description:

N-channel enhancement mode field effect transistor.

📁 Related Datasheet

PP200B060 POW-R-PAK 200A / 600V H-Bridge IGBT Assembly (Powerex Power)

PP200B060 Integrated IGBT Power Structures (ETC)

PP200B120 POW-R-PAK 200A / 1200V H-Bridge IGBT Assembly (Powerex Power)

PP200B120 Integrated IGBT Power Structures (ETC)

PP200B170 Integrated IGBT Power Structures (ETC)

PP200R060 Integrated IGBT Power Structures (ETC)

PP200R120 Integrated IGBT Power Structures (ETC)

PP200R170 Integrated IGBT Power Structures (ETC)

TAGS

PP2H06BK N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM

PP2H06BK Distributor