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PP4B10BS Datasheet - NIKO-SEM

PP4B10BS N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor PP4B10BS TO-263 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 4.2mΩ ID 134A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 1mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperat.

PP4B10BS Datasheet (190.34 KB)

Preview of PP4B10BS PDF

Datasheet Details

Part number:

PP4B10BS

Manufacturer:

NIKO-SEM

File Size:

190.34 KB

Description:

N-channel enhancement mode field effect transistor.

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PP4B10BS N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM

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