Part number:
NTE2996
Manufacturer:
NTE Electronics
File Size:
62.15 KB
Description:
N-channel mosfet.
* D Ultra Low On
* Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated D G Absolute Maximum Ratings: S Drain CCPuuorlnrsTTeteiCCnndtu==,(oIN++Duo21st50e(50VC25GC)(SN..=o.. ..t1e..0..1V..)).. . . . . . . . . . . . . . . . . . . .
NTE2996
NTE Electronics
62.15 KB
N-channel mosfet.
📁 Related Datasheet
NTE299 - Silicon NPN Transistor
(NTE)
NTE299 Silicon NPN Transistor RF Power Amp, Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . .
NTE2990 - P-Channel MOSFET
(NTE)
NTE2990 MOSFET P−Channel, Enhancement Mode High Speed Switch TO220 Full Pack
Features: D Low Drain−Source On−Resistance D Low Input Capacitance D Hig.
NTE2991 - N-Channel MOSFET
(NTE)
NTE2991 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package
Features: D Ultra Low On−Resistance D Dynamic dv/dt Rating D +175C O.
NTE2992 - N-Channel MOSFET
(NTE)
NTE2992 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package
Features: D 4V Gate Drive D Low Drain−Source On−Resistance.
NTE2993 - N-Channel MOSFET
(NTE)
NTE2993 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3 Type Package
D
Features: D Repetitive Avalanche Ratings D Dynamic dv/dt Rating D Si.
NTE2994 - N-Channel MOSFET
(NTE)
NTE2994 MOSFET N−Channel, Enhancement Mode High Speed Switch
Absolute Maximum Ratings: (TC = +255C unless otherwise specified) Drain−Source Voltage, .
NTE2995 - N-Channel MOSFET
(NTE)
NTE2995 MOSFET N−Channel, Enhancement Mode High Speed Switch
Features: D RDS(on) = 0.65Ω Typical D Extremely High dv/dt Capability D Gate Charge Mini.
NTE2997 - P-Channel MOSFET
(NTE)
NTE2997 MOSFET P−Channel, Enhancement Mode High Speed Switch
Features: D Good Frequency Characteristics D High Speed Switching D Wide Area of Safe Op.
