NTE130 Datasheet, Transistor, NTE

NTE130 Features

• Transistor D DC Current Gain: hFE = 20
    – 70 @ IC = 4A D Collector
    –Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absol

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NTE130

Manufacturer:

NTE

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📄 Datasheet

Description:

Silicon power transistor. The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching an

NTE130 Application

• Applications Features: D DC Current Gain: hFE = 20
    – 70 @ IC = 4A D Collector
    –Emitter Saturation Voltage: VCE(sat)

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