NTE175 - Silicon Complementary Transistors

NTE

NTE175 Datasheet Preview — Preview of NTE175 PDF

Datasheet Details

Part number	NTE175
Manufacturer	NTE
File Size	29.08 KB
Description	Silicon Complementary Transistors
Datasheet	NTE175_NTEElectronics.pdf

NTE175 Product details

Description

The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high speed switching and linear amplifier applications for high voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.

Features

D Collector.
Emitter Sustaining Voltage: NTE38: VCEO(sus) = 350V @ IC = 200mA NTE175: VCEO(sus) = 300V @ IC = 200mA D Second Breakdown Collector Current: NTE38 IS/b = 875mA @ VCE = 40V NTE175 IS/b = 350mA @ VCE = 100V D Usable DC Current Gain to 2.0Adc Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO NTE38.
. . . . 350V NTE175.

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Published: May 9, 2005 |