Datasheet4U Logo Datasheet4U.com

NTE191 Datasheet - NTE

Silicon Complementary Transistors

NTE191 Features

* D High Collector

* Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA D Low Collector

* Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 30mA D Low Collector

* Base Capacitance: Ccb = 3pF (Max) @ VCB = 20V Absolute Maximum Ratings: Collector

* Emitter Volta

NTE191 Datasheet (23.92 KB)

Preview of NTE191 PDF

Datasheet Details

Part number:

NTE191

Manufacturer:

NTE

File Size:

23.92 KB

Description:

Silicon complementary transistors.

📁 Related Datasheet

NTE19 Silicon Complementary Transistors (NTE)

NTE190 Silicon NPN Transistor High Voltage Amplifier (NTE)

NTE1900 Integrated Circuit 3-Terminal Adjustable Positive Voltage Regulator (NTE)

NTE1901 Integrated Circuit Negative Adjustable Voltage Regulator (NTE)

NTE1902 Integrated Circuit 3 Terminal Positive Voltage Regulator (NTE)

NTE1903 Integrated Circuit Negative 3 Terminal Voltage Regulator (NTE)

NTE1904 Integrated Circuit Positive 3 Terminal Voltage Regulator (NTE)

NTE1905 Integrated Circuit Negative 3 Terminal Voltage Regulator (NTE)

NTE1906 Integrated Circuit Positive 3 Terminal Voltage Regulator (NTE)

NTE1907 Integrated Circuit Negative 3 Terminal Voltage Regulator (NTE)

TAGS

NTE191 Silicon Complementary Transistors NTE

Image Gallery

NTE191 Datasheet Preview Page 2

NTE191 Distributor