NTE191 Datasheet, Transistors, NTE

NTE191 Features

• Transistors D High Collector
    –Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA D Low Collector
    –Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 3

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Part number:

NTE191

Manufacturer:

NTE

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23.92kb

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📄 Datasheet

Description:

Silicon complementary transistors. The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high  –v

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