NTE191 - Silicon Complementary Transistors

NTE

NTE191 Datasheet Preview — Preview of NTE191 PDF

Datasheet Details

Part number	NTE191
Manufacturer	NTE
File Size	23.92 KB
Description	Silicon Complementary Transistors
Datasheet	NTE191_NTEElectronics.pdf

NTE191 Product details

Description

The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high voltage video and luminance output stages in TV receivers.

Features

D High Collector.
Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 30mA D Low Collector.
Base Capacitance: Ccb = 3pF (Max) @ VCB = 20V Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . 300V Collector.
Base Voltage, VCB.

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Published: May 9, 2005 |