NTE196 - Silicon Complementary Transistors

NTE

NTE196 Datasheet Preview — Preview of NTE196 PDF

Datasheet Details

Part number	NTE196
Manufacturer	NTE
File Size	24.27 KB
Description	Silicon Complementary Transistors
Datasheet	NTE196_NTEElectronics.pdf

NTE196 Product details

Description

The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type package designed for use in general purpose amplifier and switching applications.

Features

D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 70V Min D High Current.
Gain Bandwidth Product: fT = 4MHz Min @ IC = 500mA (NTE196) = 10MHz Min @ IC = 500mA (NTE197) Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . . 70V Collector.
Base Voltage, VCB.

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Published: May 9, 2005 |