NTE196 - Silicon Complementary Transistors
NTE196 Features
* D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector
* Emitter Sustaining Voltage: VCEO(sus) = 70V Min D High Current
* Gain Bandwidth Product: fT = 4MHz Min @ IC = 500mA (NTE196) = 10MHz Min @ IC = 500mA (NTE197) Absolute Maximum Ratings: Collector
* Emitter
