NTE244 Datasheet - NTE

NTE244 Silicon Complementary Transistors

NTE244 Features

* D High DC Current Gain: hFE = 3000 Typ @ IC = 4A D Collector

* Emitter Sustaining Voltage: VCEO(sus) = 80V Min @ 100mA D Low Collector

* Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 4A = 3V Max @ IC = 8A D Monolithic Construction with Built

* In Base

* Emitter Shunt

Datasheet Details

NTE244

NTE

26.51 KB

Silicon complementary transistors.

📁 Related Datasheet

NTE24 Silicon Complementary Transistors (NTE)

NTE240 Silicon Complementary Transistors (NTE)

NTE2401 Silicon PNP Transistor (NTE)

NTE2402 Silicon Complementary Transistors (NTE)

NTE2403 Silicon Complementary Transistors (NTE)

NTE2404 Silicon Complementary Transistors (NTE)

NTE2405 Silicon Complementary Transistors (NTE)

NTE2406 Silicon NPN Transistor (NTE)

TAGS

NTE244 Silicon Complementary Transistors NTE

NTE244 Distributor