Part number:
NTE312
Manufacturer:
NTE
File Size:
24.41 KB
Description:
N-channel silicon junction field effect transistor.
Datasheet Details
NTE312 Features
* D High Power Gain: 10dB Min at 400MHz D High Transconductance: 4000 µmho Min at 400MHz D Low Crss: 1pF Max D High (Yfs) / Ciss Ratio (High
* Frequency Figure
* of
* Merit) D Drain and Gate Leads Separated for High Maximum Stable Gain D Cross
* Modulation Minimized by Square
Datasheet Details
NTE312
NTE
24.41 KB
N-channel silicon junction field effect transistor.
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NTE312 Distributor