NTE312 N-Channel Silicon Junction Field Effect Transistor

NTE

Description

NTE312 N *Channel Silicon Junction Field Effect Transistor .
The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. 92 package.

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Datasheet Specifications

Part number: NTE312
Manufacturer: NTE
File Size: 24.41 KB
Datasheet: NTE312_NTEElectronics.pdf
Description: N-Channel Silicon Junction Field Effect Transistor

Features

* D High Power Gain: 10dB Min at 400MHz D High Transconductance: 4000 µmho Min at 400MHz D Low Crss: 1pF Max D High (Yfs) / Ciss Ratio (High
* Frequency Figure
* of
* Merit) D Drain and Gate Leads Separated for High Maximum Stable Gain D Cross
* Modulation Minimized by Square

Applications

* The NTE312 comes in a TO

NTE312 Distributors

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NTE312 N-Channel Silicon Junction Field Effect Transistor NTE

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