NTE312 - N-Channel Silicon Junction Field Effect Transistor

NTE

Datasheet Details

Part number	NTE312
Manufacturer	NTE
File Size	24.41 KB
Description	N-Channel Silicon Junction Field Effect Transistor
Datasheet	NTE312_NTEElectronics.pdf

The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. 92 package.

D High Power Gain: 10dB Min at 400MHz D High Transconductance: 4000 µmho Min at 400MHz D Low Crss: 1pF Max D High (Yfs) / Ciss Ratio (High.
Frequency Figure.
of.
Merit) D Drain and Gate Leads Separated for High Maximum Stable Gain D Cross.
Modulation Minimized by Square.
Law Transfer Characteristic D For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain.
Gate Volt.

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Published: May 9, 2005 |