NTE389 - Silicon NPN Transistor

NTE

Datasheet Details

The NTE389 is a high voltage silicon NPN power transistor in a TO3 type case designed for use in CRT horizontal deflection circuits.

D Collector.
Emitter Voltage: VCEX = 1500V D Glass Passivated Base.
Collector Junction D Forward Bias Safe Operating Area @ 50µs = 20A, 300V D Switching Times with Inductive Loads: tf = 0.5µs (Typ) @ IC = 3A Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . 750V Collector.
Emitter Voltage, VCEX.

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Published: May 9, 2005 |