NTE55 Datasheet, Transistors, NTE

NTE55 Features

• Transistors D DC Current Gain Specified to 4A: hFE = 40 Min @ IC = 3A = 20 MIn @ IC = 4A D Collector
    –Emitter Sustaining Voltage: VCEO(sus) = 150V Min D High Current Gain
   &

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Part number:

NTE55

Manufacturer:

NTE

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23.30kb

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📄 Datasheet

Description:

Silicon complementary transistors. The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case designed for use as a high frequency driv

NTE55 Application

• Applications Features: D DC Current Gain Specified to 4A: hFE = 40 Min @ IC = 3A = 20 MIn @ IC = 4A D Collector
    –Emitter Sustaining

TAGS

NTE55

NTE

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