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BUK6213-30A - N-Channel MOSFET

BUK6213-30A Description

BUK6213-30A TrenchMOS™ Intermediate level FET M3D300 Rev.02 * 22 September 2003 Product data 1.Product profile 1.1 .
N-channel enhancement mode field-effect power transistor in a plastic package using Philips General Purpose Automotive (GPA) TrenchMOS™ technology.

BUK6213-30A Applications

* s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 267 mJ s ID ≤ 55 A s RDSon = 10 mΩ (typ) s Ptot ≤ 102 W. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Simp

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N-Channel MOSFET NXP Semiconductors
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