BUK762R7-30B Datasheet, Fet, NXP Semiconductors

BUK762R7-30B Features

• Fet
• Low conduction losses due to low on-state resistance
• Q101 compliant
• Suitable for standard level gate drive sources
• Suitable for thermally demand

PDF File Details

Part number:

BUK762R7-30B

Manufacturer:

NXP ↗ Semiconductors

File Size:

174.08kb

Download:

📄 Datasheet

Description:

N-channel trenchmos standard level fet. Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product

BUK762R7-30B Application

• Applications 1.2 Features and benefits
• Low conduction losses due to low on-state resistance
• Q101 compliant
• Suitable

TAGS

BUK762R7-30B

NXP Semiconductors

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